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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1087 DESCRIPTION With TO-220C package High DC current gain DARLINGTON APPLICATIONS For low frequency power amplifier and low speed power switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC PARAMETER ANG INCH Collector-emitter voltage Emitter-base voltage Collector current-DC Collector power dissipation Collector-base voltage EMIC ES Open emitter Open base Open collector Ta=25ae CONDITIONS OND TOR UC VALUE -100 -100 -5 -5 1.5 UNIT V V V A PC W TC=25ae 30 150 -55~150 ae ae Tj Tstg Junction temperature Storage temperature Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN TYP. 2SB1087 SYMBOL MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-30mA, IB=0 -100 V VCEsat Collector-emitter saturation voltage IC=-2A ,IB=-2mA -1.5 V VBEsat Base-emitter saturation voltage IC=-2A ,IB=-2mA -2.0 V ICBO Collector cut-off current VCB=-100V, IE=0 1 |I A IEBO Emitter cut-off current VEB=-5V; IC=0 -3 mA hFE-1 DC current gain IC=-2A , VCE=-5V 2000 20000 hFE-2 DC current gain IC=-5A , VCE=-5V 500 HAN INC SEM GE OND IC TOR UC 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1087 SEM GE HAN INC OND IC TOR UC Fig.2 Outline dimensions 3 |
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